Parts Agency Newsletter 01/2020

Dear Readers of the TESAT Parts Agency Newsletter,

after an excellent start into 2020, we all were suddenly hit by an exceptional situation: COVID-19. At the TESAT Parts Agency, the planning of customer visits, conference contributions, supplier meetings, papers presentations and new training courses at our TESAT Campus had to be rescheduled to a later date.

The space industry, like most others, had to analyze and rethink its way of working in the light of the developing situation around COVID-19. Whilst this is the dominating topic in all our business and private life since about ten weeks, we want to express that regular business is ongoing and will continue by publishing a short newsletter on a unique and attractive opportunity:

In addition to our daily stock search and sales used by you, we offer a special occasion of two space qualified Flash Memory Parts that can be procured in larger QTYs via the Parts Agency. The user of these parts can profit from a very long space heritage, extensive qualification to ESA and NASA standards and ready to use radiation tested devices. Please see the details below and feel free to contact us for further details and quote: either via our Parts Agency proposal team of Dr. Jens Haala or via This email address is being protected from spambots. You need JavaScript enabled to view it..

Best regards, stay safe and healthy,

Your TESAT Parts Agency.

For any questions, for your feedback or topics you wish to be addressed in the next newsletter please contact Dr. Frederik Küchen.

E-Mail: This email address is being protected from spambots. You need JavaScript enabled to view it. Phone: +49 (0) 7191 - 930 - 2414


Stock available: SAMSUNG Flash

The memory remains: Airbus DS has a long history of reliable use of flash memories in space. The Samsung 32 GBit flash technology has been space qualified by Airbus DS under ESA supervision, and a delta qualification to NASA EEE-INST-002 requirements was performed thereafter. Since its qualification, it has gained extensive in-orbit heritage in a plenty of projects and orbits.

Key facts:

  • K9W8G08U1M, 48-pi TSOP1 lead free 12mm x 20mm
  • 32 Gbit SLC QDP 512M x 8 Bit NAND Flash Memory
  • Several thousand pcs built into FMs in the past 10 years
  • More than 8 years of flight heritage in LEO and MEO applications
  • Passes 100 krad TID parametrically
  • Robust SEE behaviour, SEL immune to LETTH>60 MeV-cm²/mg, only destructive events due to SEFI during write/erase operation with a very low cross-section und LETTH>32MeV-cm²/mg. Reading still possible after the event
  • Available in SnPb (qualified retinning) or lead-free
  • FM, EM and customized screening available
  • SLDC

Typical ratings:

Parameter

Symbol

Ratings

Supply Voltage

VCC

2.7 to 3.6 V

Temperature under Bias (max)

TBIAS

-40 to +125 °C

Storage temperature (max)

TSTG

-65 to +150 °C

Program page / read page / erase block

 

300µs / 25µs / 2ms

Endurance

 

100k cycles

Data retention

 

10 years

Wrap up:

Flight heritage of this flash technology was first gained as early as in September 2012. Airbus DS has now multiple products with worldwide customers successfully operating in space with this Samsung flash memory technology – all that with no destructive events, no degradation (no new bad blocks) and no uncorrectable data errors. The radiation performance is a game changer to previous SDRAM technology.

The flash memory component can be used as-is (unstacked) and offer exceptional reliability and wear-out performance.

 Example of the part type marking and package finish after serial number label removal.Radiographic imageOverall view of the die  after plastic and polyimide removal

 


Stock available: MICRON Flash

Apart from the Samsung devices, there is another attractive offer to participate in the stock of Airbus’ next generation flash memory: a 256 GB Micron Flash. Flexibility is a trump card: ECSS-Q-ST-60-13C Class 1 and 2 or even customized New Space screening solutions open the window for your efficient market response.

Key facts:

  • 256 Gb NAND FLASH MEMORY
  • Synchronous + asynchronous modes
  • Read/write throughput per pin (synchronous. mode): 200 MT/s
  • 100 ball BGA with SN64PB36 balls (re-balled) or lead-free , 12 mm x 18 mm x 1.4 mm
  • TID and SEE tested. robust SEE behaviour, SEL immune to LETTH>60 MeV-cm²/mg
  • Ongoing ECSS-Q-ST-60-13C class 1 qualification at Airbus DS, class 2 qualification already completed, customized screening optionally, EM available
  • SLDC and single wafer lot

Typical ratings:

Parameter

Symbol

Ratings

Supply voltage

VCC

-2.7 to 3.6 V

Temperature under Bias

TBIAS

-40 to +85 °C

Storage temperature

TSTG

-65 to +150 °C

Program page / read page / erase block

 

350µs / 35µs / 1.5ms

Endurance

 

60k cycles

Data retention

 

JESDE47G compliant

Wrap up:

A stock of 256 Gbit NAND flash from Micron is available. These devices offer an unmatched compactness, low mass and low power dissipation solution for high density data storage. The Micron 256GBit flash lot has been space qualified by Airbus DS with full compliance to ECSS-Q-ST-60-13C requirements. These components are available with lead-free or SnPb finish thanks to a re-balling process qualified by Airbus DS.

Customers can select between a basic and cost efficient static burn-in or alternatively an advanced dynamic burn-in as preferred by many ESA and NASA projects.

 Top View MICRON FlashSide view showing the bond loopsOverall view onto the device after removal of molding

© Tesat-Spacecom GmbH & Co. KG, 2020
Contact
Tesat-Spacecom GmbH & Co. KG
Gerberstr. 49
71522 Backnang
Germany